Structurally matched ferroelectric device

Details Structurally matched ferroelectric device Structurally matched ferroelectric device

1992-08-04

1994-12-13

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 77, 257 78, H01L 2722, H01L 2982, H01L 2996, H01L 4900

Patent

active

053731760

ABSTRACT:
A ferroelectrics device includes a semiconductor substrate having a diamond structure or zinc blend structure, and a ferroelectric compound film formed on the semiconductor substrate by selective epitaxial growth. The ferroelectric compound film is made of a mixed crystal of at least three components in groups II and VI and has the same structure as the semiconductor substrate.

REFERENCES:
patent: 3832700 (1974-08-01), Wu et al.
Dreifus et al., "Diluted Magnetic Semiconductor (CdMnTe) SchottKy. Diodes and FETs", Appl. Phys. Lett., 53(14), Oct. 3, 1988.

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