Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2007-08-28
2010-12-21
Zarneke, David A (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257SE29253, C257S192000
Reexamination Certificate
active
07855401
ABSTRACT:
An improved field effect transistor formed in the Group III nitride material system includes a two part structure in which a chemical vapor deposited passivation layer of silicon nitride encapsulates a previously sputtered-deposited layer of silicon nitride. The sputtered layer provides some of the benefits of passivation and the chemical vapor deposited layer provides an excellent environmental barrier.
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Ring Zoltan
Sheppard Scott T.
Smith Richard P.
Anya Igwe U
Cree Inc.
Withrow & Terranova, P.L.L.C.
Zarneke David A
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