Passivation of mercury cadmium telluride semiconductor surfaces

Details Passivation of mercury cadmium telluride semiconductor surfaces Passivation of mercury cadmium telluride semiconductor surfaces

1975-07-16

1976-08-24

Edlow, Martin H.

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

357 52, 357 61, 204 15, 204 56R, H01L 2714, H01L 2934, H01L 29161

Patent

active

039770184

ABSTRACT:
A substrate of photoconductive semiconductor material is anodized by electrolysis in an electrolyte such as, for example, 0.1M KOH 90% ethylene glycol - 10% deionized water to form anodic oxide surfaces to stabilize the surface state density to prevent recombination hole-electron pairs during sweepout thereby producing a long term, high temperature stable infrared detector.

REFERENCES:
patent: 3577175 (1971-05-01), Gri et al.
patent: 3723190 (1973-03-01), Kruse
patent: 3779803 (1973-12-01), Lee et al.
patent: 3798135 (1974-03-01), Bracken
patent: 3799803 (1974-03-01), Kraus et al.
patent: 3929589 (1975-12-01), Ermanis

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