Passivation of material using ultra-fast pulsed laser

Details Passivation of material using ultra-fast pulsed laser Passivation of material using ultra-fast pulsed laser

2006-09-26

2006-09-26

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

C438S038000, C438S473000, C438S958000, C438S974000, C257S056000, C257S058000, C257S062000, C257S626000, C257SE21002

Reexamination Certificate

active

07112545

ABSTRACT:
The surface of a semiconductor material, e.g., gallium arsenide, is passivated by irradiating the surface with ultra-short laser pulses, until a stable passive surface is achieved. The passive surface so prepared is devoid of a superficial oxide layer.

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