Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board
Patent
1985-05-21
1987-09-29
Pianalto, Bernard D.
Coating processes
Electrical product produced
Integrated circuit, printed circuit, or circuit board
427299, 20419232, B05D 306
Patent
active
046968288
ABSTRACT:
Pnictide thin films, particularly phosphorus, grown on III-V semiconductors, particularly InP, GaP, and GaAs, are amorphous and have a novel layer-like, puckered sheet-like local order. The thin films are typically 400 Angstroms thick and grown preferably by molecular beam deposition, although other processes such as vacuum evaporation, sputtering, chemical vapor deposition, and deposition from a liquid melt may be used. The layers are grown on the <100> <110>, and <111> surfaces of the III-V crystals. The pnictide layer reduces the density of surface states, and allows the depletion layer to be modulated, the surface barrier reduced, the electron concentration at the surface increased, and there is a decrease in the surface recombination velocity and an increase in the photoluminescence intensity. The layers may be utilized in MIS and Metalsemiconductor (Schottky) devices for example to insulate and passivate MISFETS, to passivate MESFETS, to reduce the surface current component of the reverse bias dark current in P-I-N and avalanche diodes, and to improve performance of opto-electronic devices such as light emitting diodes, lasers, solar cells, photo cathodes and photo detectors. The pnictide layer may be applied to intermetallic and compound semiconductors having a pnictide component. The pnictides may be phosphorus, arsenic, antimony or bismuth, or combinations thereof.
Bunz Lewis A.
Olego Diego J.
Raccah Paul M.
Schachter Rozalie
Serreze Harvey B.
Davis IV F. Eugene
Pianalto Bernard D.
Stauffer Chemical Company
Stone Mark P.
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