Passivation of III-V semiconductor surfaces by plasma nitridatio

Details Passivation of III-V semiconductor surfaces by plasma nitridatio Passivation of III-V semiconductor surfaces by plasma nitridatio

1982-11-29

1984-05-15

Lawrence, Evan K.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG70, 156DIG99, 427 39, 427 87, C23C 1108, C30B 2510

Patent

active

044486332

ABSTRACT:
Type III-V compound semiconductor surfaces are passivated by exposure to a low pressure nitrogen plasma. The III element forms III element-nitride. Nitridation is performed in two steps; the first being at a low temperature to prevent decomposition of the surface by loss of V element, and the second step being performed at an elevated temperature at which nitridation proceeds at a faster rate. The resultant articles have a III element-nitride surface layer which protects the articles from environmental degradation while reducing the surface state density and permitting inversion of the surface layer.

REFERENCES:
patent: 3551312 (1970-12-01), Kahng et al.
patent: 4277320 (1981-07-01), Bequwala et al.
patent: 4298629 (1981-11-01), Nozaki et al.

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