Passivation of hybrid microelectronic circuits

Stock material or miscellaneous articles – Composite – Of silicon containing

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427 93, 427 34, 427 96, B32B 904, B05D 512, B05D 100

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active

046280065

ABSTRACT:
Passivation of a hybrid microelectronic device is achieved by plasma polyization of hexamethyldisilazane on the device surface. A moisture impermeable thin film layer is deposited which protects the moisture sensitive components from corrosion. The layer is readily removable, however, in order to effect repairs to the device when necessary.

REFERENCES:
patent: 3297465 (1967-01-01), Connell et al.
patent: 4349609 (1982-09-01), Takeda et al.
patent: 4395460 (1983-07-01), Gaul

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