Passivation of electronic modules using high density plasmas

Details Passivation of electronic modules using high density plasmas Passivation of electronic modules using high density plasmas

1996-05-06

1997-06-24

Pianalto, Bernard

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

427 99, 4272552, 427294, 427571, 427579, H05H 130

Patent

active

056415460

ABSTRACT:
Passivating coatings are formed on populated electronic boards, such as a sealed chip on board electronic module, or the like, using a high density plasma deposition method that employs an electron cyclotron resonance (ECR) reactor. A populated electronic board is disposed in the electron cyclotron resonance reactor. A high density nitride plasma is generated by means of electron resonance in the reactor. The plasma is formed adjacent to a magnetic field coil where an ECR condition is established. The high density plasma forms a passivating coating that covers the populated electronic board with a silicon nitride passivating layer. To form the plasma, a mixture of silane and ammonia may be injected into the reactor to produce excited atoms that form a substantially oxygen-free nitride passivating coating. The substantially oxygen-free nitride passivating coating is deposited at a relatively low temperature, typically below 150 degrees Celsius and preferably below 100 degrees Celsius so that the components of the populated board are not damaged.

REFERENCES:
patent: 4262631 (1981-04-01), Kubacki
Tsuchimoto, "Plasma stream transport method (2) Use of charge exchange plasma source", J. Vac. Sci. Technol., 15(5), Sep./Oct. 1978, pp. 1730-1733.
Seaward et al, "Role of ions in electron cyclotron resonance plasma-enhanced chemical vapor deposition of silicon dioxide," J. Vac. Sci. Technol. B 13(1), Jan./Feb. 1995, pp. 118-124.
Apblett et al, "Silicon nitride growth in a high-density plasma system", Solid State Technology, Nov. 1995, pp. 73-80.

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