Passivation layer of semiconductor device and method for forming

Details Passivation layer of semiconductor device and method for forming Passivation layer of semiconductor device and method for forming

1997-06-26

1998-10-13

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438958, 438761, 438785, 438622, 438763, H01L 1010

Patent

active

058211748

ABSTRACT:
A passivation layer of semiconductor device, which comprises a chrome oxide on a silicon nitride or both on and beneath a silicon nitride. The chrome oxide is deposited in a physical vapor deposition technique, relieving the compressive stress of the silicon nitride so as to prevent cracks from occurring therein.

REFERENCES:
patent: 3615947 (1971-10-01), Yamada
patent: 4217570 (1980-08-01), Holmes
patent: 4952904 (1990-08-01), Johnson et al.
patent: 5340775 (1994-08-01), Carruthers et al.
patent: 5424095 (1995-06-01), Clark et al.

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