Passivation layer for group III-V semiconductor devices

Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Having heterojunction

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Reexamination Certificate

active

06998320

ABSTRACT:
A passivation layer for a heterojunction bipolar transistor (HBT) is formed from a relatively high bandgap material that is lattice-matched to the HBT components it passivates. By selecting the passivation layer to have a higher bandgap than the HBT components, minority carriers are contained within the HBT by the passivation layer. At the same time, the lattice matching of the passivation layer ensures a robust bond that prevents the subsequent formation of dangling bonds at the exterior surfaces of the base and collector (and/or other passivated surfaces), thereby minimizing surface leakage currents.

REFERENCES:
patent: 3993506 (1976-11-01), Moon
patent: 5322573 (1994-06-01), Jain et al.
Kikawa et al.; “Passivation Of InP-Based Heterostructure Bipolar Transistors-Relation To Surface Fermi Level”, 10thIntern. Conf. on Indium Phosphide and Related Materials, May 11-15, 1998 Tsukuba, Japan.
Wang et al., “Understanding The Degradation Of InP/GaAs Heterojunction Bipolar Transistors Induced By Silicon Nitride Passivation”, 2001 International Conference on Indium Phosphide and Related Materials Conference Prodeedings 13thIPRM May 14-18, 2001 Nara, Japan.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Passivation layer for group III-V semiconductor devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Passivation layer for group III-V semiconductor devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Passivation layer for group III-V semiconductor devices will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3660364

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.