Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-09-29
2008-12-16
Pham, Thanhha (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S059000, C257S774000, C257SE29117
Reexamination Certificate
active
07466026
ABSTRACT:
A passivation layer assembly and a display substrate having the same are presented. The passivation layer assembly is positioned on a substrate having a thin film assembly and protects the thin film assembly. The thin film assembly includes a first passivation layer and a second passivation layer. The first passivation layer contacts the thin film assembly. The first passivation layer has a first etching rate with respect to an etching agent. The second passivation layer is on the first passivation layer. The second passivation layer has a second etching rate that is higher than the first etching rate with respect to the etching agent. The passivation assembly decrease the malfunction rate of the display device.
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Cho Kwan-young
Lee Ho
Lee Je-Min
Song In-Ho
Macpherson Kwok Chen & Heid LLP
Pellegrini Mark A.
Pham Thanhha
Samsung Electronics Co,. Ltd.
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