Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Having heterojunction
Reexamination Certificate
2007-05-08
2007-05-08
Baumeister, B. William (Department: 2891)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Having heterojunction
C257S197000, C257SE29033
Reexamination Certificate
active
09773798
ABSTRACT:
A SiGe heterojunction bipolar transistor including at least an emitter formed on a SiGe base region wherein the sidewalls of the emitter are protected by a conformal passivation layer. The conformal passivation layer is formed on the exposed sidewalls of said emitter prior to siliciding the structure. The presence of the passivation layer in the structure prevents silicide shorts from occurring by eliminating bridging between adjacent silicide regions; therefore improved SiGe bipolar yield is obtained. A method for forming such a structure is also provided.
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Coolbaugh Douglas Duane
Gray Peter B.
Johnson Donna Kaye
Zierak Michael Joseph
Baumeister B. William
Farahani Dana
Sabo, Esq. William D.
Scully , Scott, Murphy & Presser, P.C.
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