Passivated thin film and method of producing same

Details Passivated thin film and method of producing same Passivated thin film and method of producing same

2011-01-11

2011-01-11

Landau, Matthew C (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S019000, C438S674000, C438S685000, C438S688000, C029S623300, C029S623500, C428S098000, C429S006000, C429S047000, C429S047000, C429S231100, C429S231300

Reexamination Certificate

active

07867903

ABSTRACT:
A method of producing a passivated thin film material is disclosed wherein an insulating thin film layer (10), having pinholes (12) therein, is positioned upon an underlying electrically conductive substrate (11). The thin film layer is then electroplated so that the pinholes are filled with a reactive metal. The thin film layer and substrate are then immersed within a silicon doped tetramethylammonium hydroxide (TMAH) solution. Excess silica within the solution precipitates onto the top surfaces of the aluminum plugs (13) to form an electrically insulative cap which electrically insulates the top of the aluminum plug. As an alternative, the previously described metal plugs may be anodized so that at least a portion thereof becomes an oxidized metal which is electrically insulative.

REFERENCES:
patent: 3680028 (1972-07-01), Black et al.
patent: 4519851 (1985-05-01), Perry et al.
patent: 6248601 (2001-06-01), Chou
patent: 6342164 (2002-01-01), Beuhler et al.
patent: 6429088 (2002-08-01), Lau

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