Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – With physical configuration of semiconductor surface to...
Patent
1992-05-11
1992-11-24
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
With means to increase breakdown voltage threshold
With physical configuration of semiconductor surface to...
257626, H01L 2906
Patent
active
051667690
ABSTRACT:
A process for forming a semiconductor device begins by diffusing an N layer having a relatively high concentration into a P wafer having a relatively low concentration. Next, the wafer is etched to yield a plurality of mesa semiconductor structures, each having a P-N junction intersecting a sidewall of the mesa structure. Then, a layer of oxide is grown on the sidewalls of the mesas, which oxide layer passivates the device. The oxidizing step curves the P-N junction toward the P layer in the vicinity of the oxide layer. Then, the P-N junction is diffused deeper into the P layer with a diffusion front which tends to curve the P-N junction back toward the N layer in the vicinity of the oxide layer. This diffusion is carried out to such an extent as to compensate for the curvature caused by the oxidizing step and thereby substantially flatten the P-N junction. A plurality of successive oxidation/diffusion steps can be undertaken to further flatten the junction adjacent the mesa sidewall. The resultant P-N junction has a greater breakdown voltage in the vicinity of the oxide layer due to the substantial flatness of the P-N junction. The decreased concentration gradient of the linearly graded junction in the vicinity of the oxide layer caused by the oxidizing step increases the breakdown voltage in the vicinity of the oxide layer above the bulk breakdown voltage.
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Down Linda J.
Einthoven Willem G.
Dang Hung Xuan
General Instrument Corporation
Jackson, Jr. Jerome
Lipsitz Barry R.
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