Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-04-03
2007-04-03
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21585
Reexamination Certificate
active
10925796
ABSTRACT:
A method for forming vias which pass through a semiconductor wafer substrate assembly such as a semiconductor die or wafer allows two different types of connections to be formed during a single formation process. One connection passes through the wafer without being electrically coupled to the wafer, while the other connection electrically connects to a conductive pad. To connect to a pad, a larger opening is etched into an overlying dielectric layer, while to pass through a pad without connection, a narrower opening is etched into the overlying dielectric layer. An inventive structure resulting from the method is also described.
REFERENCES:
patent: 5138434 (1992-08-01), Wood et al.
patent: 5229647 (1993-07-01), Gnadinger
patent: 5714794 (1998-02-01), Tsuyama et al.
patent: 5714802 (1998-02-01), Cloud et al.
patent: 5818698 (1998-10-01), Corisis
patent: 6198168 (2001-03-01), Geusic et al.
patent: 6320253 (2001-11-01), Kinsman et al.
patent: 6379982 (2002-04-01), Ahn et al.
patent: 6441494 (2002-08-01), Huang et al.
patent: 6723577 (2004-04-01), Geusic et al.
patent: 2005/0029630 (2005-02-01), Matsuo
Coleman W. David
Martin Kevin D.
LandOfFree
Pass through via technology for use during the manufacture... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Pass through via technology for use during the manufacture..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Pass through via technology for use during the manufacture... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3769145