Partitioned random access and read only memory

Details Partitioned random access and read only memory Partitioned random access and read only memory

2006-04-21

2010-06-29

Nguyen, VanThu (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S230060

Reexamination Certificate

active

07746686

ABSTRACT:
A magnetic memory and a method of operating the memory are described. The memory includes memory cells that may each include a magnetoresistive bit. The memory cells may each be coupled to a current driver. Each current driver may be inhibited so that it does not output a current. Inhibiting the output current prevents the memory from being written. By inhibiting some current drivers and not inhibiting other current drivers, the memory may be partitioned into read only and random access portions.

REFERENCES:
patent: 5756366 (1998-05-01), Berg
patent: 5818771 (1998-10-01), Yasu et al.
patent: 5959906 (1999-09-01), Song et al.
patent: 6147922 (2000-11-01), Hurst
patent: 6175525 (2001-01-01), Fulkerson
patent: 6178111 (2001-01-01), Sather
patent: 6455177 (2002-09-01), Everitt
patent: 6469928 (2002-10-01), Takata
patent: 6493258 (2002-12-01), Lu
patent: 6842365 (2005-01-01), Nahas et al.
patent: 6975547 (2005-12-01), Byeon et al.
patent: 7362644 (2008-04-01), Yang et al.
patent: 2001/0015933 (2001-08-01), Reddy et al.
patent: 2001/0038554 (2001-11-01), Takata et al.
patent: 2004/0001352 (2004-01-01), Nahas et al.
patent: 2005/0013162 (2005-01-01), Jeon et al.
patent: 2005/0052901 (2005-03-01), Nahas et al.
patent: 2005/0152179 (2005-07-01), Katti
International Search Report for PCT/US2007/001293 dated Apr. 11, 2008.
Hong et al., “Magnetic element Shape for Magnetic Random Access Memory (MRAM)”, (May 28-29, 2003) (http://www.cambr. uidaho.edu/symposiums/symp11.asp).
Daughton, “Magnetoresistive Random Access Memory (MRAM),” pp. 1-13 (Feb. 4, 2000).
Hertel, “Thickness Dependence of Magnetization Structures in Thin Permalloy Rectangles”, Max-Planck-Institut fur Mikrostrukturphysik, Weinberg 2, 06120 Halle, Germany, Oct. 2002.
Slaughter, “Magnetic Tunnel Junction Materials for Electronic Applications,”JOM (Jun. 2000). (www.tms.org/pubs/journals/JOM/0006/Slaughter/Slaughter-0006.html).
“HXNV0100 64K ×16 Non-Volatile Magnetic RAM,” Honeywell International Inc., Aerospace Electronics Systems, (www.honeywell.com), pp. 1-14., May 2005.
U.S. Appl. No. 11/446,547, filed Jun. 2, 2006, Romney R. Katti.
U.S. Appl. No. 11/376,433, filed Mar. 15, 2006, Romney R. Katti.
U.S. Appl. No. 11/440,966, filed May 25, 2006, Daniel S. Reed.

Affiliated with

Also associated with

Rating

Partitioned random access and read only memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Partitioned random access and read only memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Partitioned random access and read only memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4244662