Particle reduction in PECVD processes for depositing low-k...

Details Particle reduction in PECVD processes for depositing low-k... Particle reduction in PECVD processes for depositing low-k...

2011-08-16

2011-08-16

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C257SE21240, C257SE21241, C438S785000, C438S793000

Reexamination Certificate

active

07998882

ABSTRACT:
When forming dielectric materials of reduced dielectric constant in sophisticated metallization systems, the creation of defect particles on the dielectric material may be reduced during a plasma enhanced deposition process by inserting an inert plasma step after the actual deposition step.

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Translation of Official Communication from German Patent Office for German Patent Application No. 10 2008 044 987.3 dated Apr. 16, 2009.

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