Particle controlling method and apparatus for a plasma processin

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means

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118723I, 20429807, 20429833, H05H 100

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active

059935944

ABSTRACT:
A plasma processing chamber includes a substrate holder and a member of silicon nitride such as a liner, focus ring or a gas distribution plate, the member having an exposed surface adjacent the substrate holder and the exposed surface being effective to minimize particle contamination during processing of substrates. The chamber can include an antenna which inductively couples RF energy through the gas distribution plate to energize process gas into a plasma state.

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