Particle-beam imaging system

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

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250398, H01J 3730

Patent

active

053789172

ABSTRACT:
In an ion optical imaging system, especially for lithographic imaging on a wafer, two collecting lenses are provided between the mask and the wafer. At least one of the collecting lenses is a three-electrode grid lens, i.e. a lens in which a grid is disposed perpendicular to the optical axis between a pair of tubular electrodes.

REFERENCES:
patent: 4985634 (1991-01-01), Stengl et al.
Zworykin et al., Electron Optics and the Electron Microscope, 1945, pp. 449-452.

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