Partially recessed DRAM cell structure

Details Partially recessed DRAM cell structure Partially recessed DRAM cell structure

2007-08-14

2007-08-14

Le, Thao P. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S302000

Reexamination Certificate

active

11100500

ABSTRACT:
A dynamic random access memory (DRAM) cell structure (and method for making a DRAM cell structure) that is more suitable than current DRAM structures for implementation in ever decreasing semiconductor fabrication geometries. The DRAM cell structure comprises a deep trench (DT) capacitor formed in a substrate. A recess is formed in the substrate proximate the deep trench capacitor. A gate is formed that extends into the recess but does not completely occupy the recess. A source is formed in the substrate in a region beneath the recess. A drain is formed in the substrate in a region laterally and vertically offset from the source. A channel between the source and drain is created beneath the gate along a side wall of the recess. Thus, the depth of the recess determines the length of the channel region. With this DRAM cell structure, it is easier to avoid the high doping concentration issue and the short channel effect. Consequently, this DRAM cell structure can be employed with smaller fabrication technologies.

REFERENCES:
patent: 6323082 (2001-11-01), Furukawa et al.
patent: 6441422 (2002-08-01), Mandelman et al.
patent: 6620699 (2003-09-01), Scholz et al.
patent: 6703274 (2004-03-01), Chidambarrao et al.
patent: 6784477 (2004-08-01), Jang
patent: 6797636 (2004-09-01), Tews et al.
patent: 7129129 (2006-10-01), Adam et al.
patent: 2002/0089007 (2002-07-01), Divakaruni et al.
patent: 2002/0090780 (2002-07-01), Divakaruni et al.
patent: 2003/0034512 (2003-02-01), Cappelani et al.
patent: 2003/0224605 (2003-12-01), Tews et al.
patent: 2005/0045936 (2005-03-01), Chang et al.

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