Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-04-26
2005-04-26
Chaudhari, Chandra (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S614000, C438S612000, C438S599000
Reexamination Certificate
active
06884711
ABSTRACT:
Methods and structures to reduce in semiconductor packages the length of critical electrical connections between bond pads on one or multiple semiconductor chips and wire landing pads on a substrate have been achieved. An electrical connection becomes critical if high current, high speed or radio frequency signals have to be transported. Moving the wire landing pads of critical connections on the substrate closer to the semiconductor chip utilizing unpopulated spaces of an array grid design reduces the length of said wires. This could be a ball grid array (BGA) or any other kind of grid array. Said methods and structures invented are applicable to single-chip modules and to multi-chip modules. The design of the grid array has to be modified to provide free spaces for the wire landing pads of critical electrical connections within the grid array close to the semiconductor chip as required by the design rules. The design change can be done without increasing the number of solder balls or solder pins, etc. and without increasing the area required on the motherboard.
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Ackerman Stephen B.
Chaudhari Chandra
Dialog Semiconductor GmbH
Saile George O.
Vesperman William
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