Partially pinned photodiode for solid state image sensors

Details Partially pinned photodiode for solid state image sensors Partially pinned photodiode for solid state image sensors

1997-01-17

1999-05-11

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257223, 257230, 257233, 257445, H01L31/068;31/103

Patent

active

059030216

ABSTRACT:
A pixelated image sensor having comprising a partially pinned photodiode which is formed a semiconductor of a first conductivity type formed on a surface of the sensor with at least one photodiode formed, within the semiconductor near the surface, the photodiode being formed from a second conductivity type opposite the first conductivity type; a pinning layer formed on the surface over at least a portion of the photodiode creating a pinned photodiode region, the pinning layer being formed from the first conductivity type; and an unpinned region formed near the surface in an area outside the portion used to form the pinning layer, the unpinned region is formed as a floating region that is employed as a capacitor. The partially pinned photodiode is useful in expanding the fill factor of photodetectors employing photodiode technology.

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