Partially photoexposed positive photoresist layer blocking...

Details Partially photoexposed positive photoresist layer blocking... Partially photoexposed positive photoresist layer blocking...

2005-08-30

2005-08-30

Thornton, Yvette C. (Department: 1752)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S317000, C430S950000, C438S253000

Reexamination Certificate

active

06936408

ABSTRACT:
Within a method for fabricating a microelectronic fabrication there is employed a patterned positive photoresist residue layer as a protective layer within an aperture when processing an upper region of a topographic microelectronic layer having formed therein the aperture. The patterned positive photoresist residue layer is formed employing an incomplete vertical, but complete horizontal, blanket photoexposure and development of a blanket positive photoresist layer formed upon the topographic microelectronic layer and filling the aperture. The method provides the microelectronic fabrication with enhanced reliability.

REFERENCES:
patent: 6218090 (2001-04-01), Minter et al.
patent: 6337173 (2002-01-01), Jen et al.
patent: 6365452 (2002-04-01), Perng et al.
patent: 6602749 (2003-08-01), Tu et al.
patent: 6603163 (2003-08-01), Hori et al.

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