Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making named article
Patent
1990-05-25
1992-01-07
Bowers, Jr., Charles L.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making named article
430323, 430330, 359565, 359619, G03C 500
Patent
active
050791303
ABSTRACT:
Partially recessed microlenses (31, 32; FIG. 3) are made in a substrate (10) by a technique including the steps of forming a hard-baked patterned layer (21, 22, 64, FIG. 2) on a surface of the substrate, this patterned layer having at least one island portion (21, 22) surrounded by an auxiliary portion (64), and simultaneously etching this hard-baked patterned layer and the substrate to remove at least a portion of the thickness of the hard-baked layer. The island portions are located at areas overlying where microlenses are desired. The volume of the auxiliary portions of the hard-baked patterned layer is advantageously significantly greater than that of the island portions.
Full recessed microlenses (31, 32; FIG. 6) are made by adding a step in the above technique, namely, the step of forming another hard-baked patterned layer (94) covering only the auxiliary portions of the above-mentioned patterned layer prior to the etching.
REFERENCES:
patent: 4389482 (1983-06-01), Bargon et al.
patent: 4530736 (1985-07-01), Mutter
Wada, O., "Ion-Beam Etching of InP and Its Application to the Fabrication of High Radiance InGaAsP/InP Light Emitting Diodes," J. Electrochem. Soc.: Solid-State Science and Tech., vol. 131, pp. 2373-2380.
Plasma Technology Listing.
AT&T Bell Laboratories
Bowers Jr. Charles L.
Caplan David I.
Dote Janis L.
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