Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-07-24
2010-12-28
Pizarro, Marcos D (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S315000, C257S347000, C257SE29264, C257SE21421, C438S257000
Reexamination Certificate
active
07859044
ABSTRACT:
A gate dielectric and a gate conductor layer are formed on sidewalls of at least one semiconductor fin. The gate conductor layer is patterned so that a gate electrode is formed on a first sidewall of a portion of the semiconductor fin, while a second sidewall on the opposite side of the first sidewall is not controlled by the gate electrode. A partially gated finFET, that is, a finFET with a gate electrode on the first sidewall and without a gate electrode on the second sidewall is thus formed. Conventional dual gate finFETs may be formed with the inventive partially gated finFETs on the same substrate to provide multiple finFETs having different on-current in the same circuit such as an SRAM circuit.
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Wong Robert C.
Yang Haining S.
Abate Esq. Joseph P.
Gupta Raj
International Business Machines - Corporation
Pizarro Marcos D
Scully , Scott, Murphy & Presser, P.C.
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