Partially etched dielectric film with conductive features

Details Partially etched dielectric film with conductive features Partially etched dielectric film with conductive features

2006-03-14

2006-03-14

Parekh, Nitin (Department: 2811)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S125000, C438S614000, C438S652000, C438S667000, C438S672000, C438S713000, C257S737000, C257S702000, C257S750000, C257S692000

Reexamination Certificate

active

07012017

ABSTRACT:
Provided are partially etched dielectric films with raised conductive features. Also provided are methods for forming the raised conductive features in the dielectric films, which methods include partially etching the dielectric films.

REFERENCES:
patent: 5227008 (1993-07-01), Klun et al.
patent: 5248446 (1993-09-01), Uchida et al.
patent: 5401913 (1995-03-01), Gerber et al.
patent: 5747358 (1998-05-01), Gorrell et al.
patent: 6077560 (2000-06-01), Moshrefzadeh et al.
patent: 6085414 (2000-07-01), Swarbrick et al.
patent: 6097097 (2000-08-01), Hirose
patent: 6222136 (2001-04-01), Appelt et al.
patent: 6307159 (2001-10-01), Soejima et al.
patent: 6313402 (2001-11-01), Schreiber et al.
patent: 6322903 (2001-11-01), Siniaguine et al.
patent: 6375062 (2002-04-01), Higdon et al.
patent: 6403211 (2002-06-01), Yang et al.
patent: 6537854 (2003-03-01), Chang et al.
patent: 6555908 (2003-04-01), Eichelberger et al.
patent: 6611046 (2003-08-01), Yang
patent: 6848176 (2005-02-01), Hishinuma et al.
patent: 2002/0028293 (2002-03-01), Yang et al.
patent: 2002/0084513 (2002-07-01), Siniaguine
patent: 2002/0115290 (2002-08-01), Halahan et al.
patent: 2002/0155280 (2002-10-01), Yang
patent: 2003/0116866 (2003-06-01), Khng et al.
patent: 2004/0046835 (2004-03-01), Yang et al.
patent: 2004/0094512 (2004-05-01), Ono et al.
patent: 2004/0097694 (2004-05-01), Fujihara et al.
patent: 0 388 312 (1990-09-01), None
patent: 0 507 332 (1992-10-01), None
patent: 1 005 086 (2000-05-01), None
patent: 0 697 278 (2001-04-01), None
patent: WO 01/56771 (2001-08-01), None
patent: WO 02/03767 (2002-01-01), None
patent: WO 02/100135 (2002-12-01), None
Search Report for PCT/US2005/001341.
Delphi Connection Systems, “Gold Dot™ Technology” publication, copyright 1999-2000.
Delphi Connection Systems, “Gold Dot™ speed, density and reliabilty”, publication copyright 1999-2000.

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