Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-06-12
2009-10-13
Weiss, Howard (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S151000, C438S180000, C438S237000
Reexamination Certificate
active
07601569
ABSTRACT:
Source and drain extension regions and source side halo region and drain side halo region are formed in a top semiconductor layer aligned with a gate stack on an SOI substrate. A deep source region and a deep drain region are formed asymmetrically in the top semiconductor layer by an angled ion implantation. The deep source region is offset away from one of the outer edges of the at least spacer to expose the source extension region on the surface of the semiconductor substrate. A source metal semiconductor alloy is formed by reacting a metal layer with portions of the deep source region, the source extension region, and the source side halo region. The source metal semiconductor alloy abuts the remaining portion of the source side halo region, providing a body contact tied to the deep source region to the partially depleted SOI MOSFET.
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Cai Jin
Haensch Wilfried
Majumdar Amlan
Alexanian Vazken
International Business Machines - Corporation
Rao Steven H
Scully , Scott, Murphy & Presser, P.C.
Weiss Howard
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