Partially and fully silicided gate stacks

Details Partially and fully silicided gate stacks Partially and fully silicided gate stacks

2011-06-14

2011-06-14

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S692000

Reexamination Certificate

active

07960795

ABSTRACT:
Metal-oxide semiconductor (MOS) devices and techniques for the fabrication thereof are provided. In one aspect, a metal-oxide semiconductor device is provided comprising a substrate; and at least one n-channel field effect transistor (NFET) having a gate stack over the substrate. The NFET gate stack comprises an NFET gate stack metal gate layer; a first NFET gate stack silicon layer over the NFET gate stack metal gate layer; a second NFET gate stack silicon layer over a side of the first NFET gate stack silicon layer opposite the NFET gate stack metal gate layer, wherein an interface is defined between the first NFET gate stack silicon layer and the second NFET gate stack silicon layer; and an NFET gate stack silicide region that extends through the interface between the first NFET gate stack silicon layer and the second NFET gate stack silicon layer.

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