Partial write-back in read and write-back of a memory

Static information storage and retrieval – Read/write circuit

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S185220

Reexamination Certificate

active

07821843

ABSTRACT:
An integrated circuit having a functional memory and methods of operating and reducing an operating power of the integrated circuit are provided. The functional memory includes an array of memory cells connected to row and column periphery units and organized in corresponding rows and columns. The memory also includes a word line that provides row access to a memory cell. The memory further includes at least one bit line that provides column access to the memory cell. The memory still further includes a partial write-back module, connected to the at least one bit line, that establishes a bit line bias to maintain a current state of the memory cell when in a half-selected condition based on a read of the current state and during a write cycle to a selected memory cell in the array.

REFERENCES:
patent: 2004/0183808 (2004-09-01), Radke et al.
patent: 2005/0128789 (2005-06-01), Houston

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Partial write-back in read and write-back of a memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Partial write-back in read and write-back of a memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Partial write-back in read and write-back of a memory will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4166590

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.