Static information storage and retrieval – Read/write circuit – Erase
Reexamination Certificate
2006-01-19
2008-12-23
Luu, Pho M. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Erase
C365S185190, C365S200000
Reexamination Certificate
active
07468926
ABSTRACT:
A method for erasing memory cells in a memory array, the method including applying an erase pulse to bits of a cell ensemble of a memory cell array, and performing an erase verification operation only on a subgroup of the cell ensemble being erased to check if the memory cells threshold voltage (Vt) has been lowered to an erase verify (EV) voltage level.
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Eisen Shai
Shappir Assaf
EMPK & Shiloh, LLP
Luu Pho M.
Saifun Semiconductors Ltd.
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