Parametric profiling using optical spectroscopic systems

Details Parametric profiling using optical spectroscopic systems Parametric profiling using optical spectroscopic systems

2007-10-09

2007-10-09

Toatley, Jr., Gregory J. (Department: 2877)

Optics: measuring and testing

Dimension

Thickness

C356S625000

Reexamination Certificate

active

10327466

ABSTRACT:
A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities Rs, Rpand ellipsometric parameters may be used in measuring the diffracting structures and the associated films. Some of the radiation parameters may be more sensitive to a change in the parameter value of the profile or of the films then other radiation parameters. One or more radiation parameters that are more sensitive to such changes may be selected in the above-described optimization process to arrive at a more accurate measurement. The above-described techniques may be supplied to a track/stepper and etcher to control the lithographic and etching processes in order to compensate for any errors in the profile parameters.

REFERENCES:
patent: 4039370 (1977-08-01), Kleinknecht
patent: 4141780 (1979-02-01), Kleinknecht et al.
patent: 4200396 (1980-04-01), Kleinknecht et al.
patent: 4303341 (1981-12-01), Kleinknecht et al.
patent: 4330213 (1982-05-01), Kleinknecht et al.
patent: 4408884 (1983-10-01), Kleinknecht et al.
patent: 4710642 (1987-12-01), McNeil
patent: 4905170 (1990-02-01), Forouhi et al.
patent: 5164790 (1992-11-01), McNeil et al.
patent: 5241369 (1993-08-01), McNeil et al.
patent: 5329357 (1994-07-01), Bernoux et al.
patent: 5337146 (1994-08-01), Azzam
patent: 5381233 (1995-01-01), Chao et al.
patent: 5408322 (1995-04-01), Hsu
patent: 5416594 (1995-05-01), Gross et al.
patent: 5607800 (1997-03-01), Ziger
patent: 5608526 (1997-03-01), Piwonka-Corle et al.
patent: 5739909 (1998-04-01), Blayo et al.
patent: 5757671 (1998-05-01), Drevillon et al.
patent: 5805290 (1998-09-01), Ausschnitt et al.
patent: 5825498 (1998-10-01), Thakur et al.
patent: 5835221 (1998-11-01), Lee et al.
patent: 5867276 (1999-02-01), McNeil et al.
patent: 5880838 (1999-03-01), Marx
patent: 5923423 (1999-07-01), Sawatari et al.
patent: 5956148 (1999-09-01), Celii
patent: 5963329 (1999-10-01), Conrad et al.
patent: 6031615 (2000-02-01), Meeks et al.
patent: 6104486 (2000-08-01), Arimoto
patent: 6118525 (2000-09-01), Fossey et al.
patent: 6271047 (2001-08-01), Ushio et al.
patent: 6483580 (2002-11-01), Xu et al.
patent: 6590656 (2003-07-01), Xu et al.
patent: 6603542 (2003-08-01), Chase et al.
patent: 6614540 (2003-09-01), Stirton
patent: 6657736 (2003-12-01), Finarov et al.
patent: 6678043 (2004-01-01), Vurens et al.
patent: 6728663 (2004-04-01), Krukar et al.
patent: 6829057 (2004-12-01), Opsal et al.
patent: 7003149 (2006-02-01), Benesch et al.
patent: 0480620 (1992-04-01), None
patent: 1124163 (2001-08-01), None
patent: WO99/45340 (1999-09-01), None
patent: WO 00/35002 (2000-06-01), None
International Search Report corresponding to PCT International Application No. PCT/US02/41151, filed Dec. 19, 2002, 7 pages.
“Developed Photoresist Metrology Using Scatterometry” Murnane et al., Center for High Technology Materials, University of New Mexico, SPIE, vol. 2196, pp. 47-59.
“Ellipsometric-Scatterometry for sub-0.1 μm CD measurements”, Coulombe et al., Center for High Technology Materials, University of New Mexico, SPIE vol. 3332, pp. 282-292.
“Ultraviolet-visible ellipsometry for process control during the etching of submicrometer features,” N. Blayo et al.,J. Opt. Soc. Am. A, vol. 12, No. 3, Mar. 1995, pp. 591-599.
International Preliminary Examination Report for PCT/US99/04053 mailed Jul. 3, 2000.
Written Opinion for PCT/US99/04053, mailed Mar. 27, 2000.
“Optical dispersion relations for amorphous semiconductors and amorphous dielectrics,” A.R. Forouhi et al.,Physical Review B, vol. 34, No. 10, Nov. 15, 1986, pp. 7018-7026.
“Optical properties of crystalline semiconductors and dielectrics,” A.R. Forouhi et al.,Physical Review B, vol. 38, No. 3, Jul. 15, 1988, pp. 1865-1873.
“Optical characterization of amorphous and polycrystalline silicon films,” E. Ibok et al.,Solid State Technology, Aug. 1995.
“Convergence of the coupled-wave method for metallic lamellar diffraction gratings,” L. Li et al.,Journal of the Optical Society of America A, vol. 10, No. 6, Jun. 1993, pp. 1184-1188.
“Multilayer modal method for diffraction gratings of arbitrary profile, depth, and permitivity,” L. Li,Journal of the Optical Society of America A, vol. 10, No. 12, Dec. 1993, pp. 2581-2591.
“A model analysis of lamelar diffraction gratings in a conical mounting,” L. Li,Journal of Modern Optics, vol. 40, No. 4, 1993, pp. 553-573.
“Metrology of subwavelength photoresist gratings using optical scatterometry,” C.J. Raymond et al.,J. Vac. Sci. Technol. B, vol. 13, No. 4, Jul./Aug. 1995, pp. 1484-1495.
“Line size effects on ultraviolet reflectance spectra,” D.H. Ziger et al.,Opt. Eng., vol. 36, No. 1, Jan. 1997, pp. 243-250.
“Scatterometry and the Simulation of Diffraction-Based Metrology,” S. Sohail et al.,Microlithography World, Jul./Aug./Sep. 1993, pp. 5-16.
“A broadband UV small spot spectroscopic ellipsometer,” T.R. Corle,SPIE Microlithography, 1995, pp. 1-12.
“Rigorous coupled-wave analysis of planar-grating diffraction,” M.G. Moharam et al.,J. Opt. Soc. Am., vol. 71, No. 7, Jul. 1981, pp. 881-818.
“Stable implementation of the rigorous coupled-wave analysis for surface-relief gratings: enhanced transmittance matrix approach,” M.G. Moharam et al.,J. Opt. Soc. Am. A, vol. 12, No. 5, May 1995, pp. 1077-1086.
Diffraction: www.scienceworld.wolfram.com/physics/Diffraction.html.
Physics 204 Laboratory 13 Diffraction Grating, www.physics.fsu.edu/courses/fall98/phy2049c/labs/L13.pdf.
Pforr, R. et al., “In-Process Image Detecting Technique For Determination of Overlay and Image Quality for ASM-L Wafer Stepper”SPIE, vol. 1674Optical Laser Microlithography V(1992).
European Patent Office, “Communication of the European Search Report”, mailed in EP 04078145.2 on Dec. 28, 2004.
“Spectroscopic Ellipsometry—A technology primer”, KLA-Tencor.
Mills. D. W. et al., “Spectral ellipsometry on patterned wafers”,SPIE's Microelectronic Manufacturing: Process, Equipment, and Materials Control in Integrated Circuit Manufacturing, Spievol. 2637,Austin(USA), 1995.
Gaylord, T .K. et al., Analysis and Applications of Optical Diffraction by Gratings,Proceedings of the IEEE, vol. 73, No. 5, May 1985, pp. 894-937.
M. G. Moharam, “Coupled-wave analysis of Two-Dimensional Dielectric Gratings,”Proc. SPIE, vol. 883, pp. 8-11 (1988).
M. G. Moharam, E. B. Grann, D. A. Pommet, and T. K. Gaylord, “Formulation of stable and efficient implementation of the rigorous coupled-wave analysis of binary gratings,”J. Opt. Soc. Am. A, vol. 12, pp. 1068-1076 (1995).
L. Li, “Formulation and comparison of two recursive matrix algorithms for modeling layered diffraction gratings,”J. Opt. Soc. Am. A, vol. 13, pp. 1024-1035 (1996).
McNeil, J. R., et al. “Scatterometry applied to microelectronics processing”, Part 1,Solid State Technology, Mar. 1993.
McNeil, J. R., et al. “Scatterometry applied to microelectronics processing”, Part 2,Solid State Technology, Apr. 1993.
PCT/US99/04053, filed Feb. 25, 1999.

Affiliated with

Also associated with

Rating

Parametric profiling using optical spectroscopic systems does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Parametric profiling using optical spectroscopic systems, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Parametric profiling using optical spectroscopic systems will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3828504