Parametric profiling using optical spectroscopic systems

Details Parametric profiling using optical spectroscopic systems Parametric profiling using optical spectroscopic systems

2005-05-31

2005-05-31

Font, Frank G. (Department: 2877)

Optics: measuring and testing

By polarized light examination

Of surface reflection

C356S630000, C356S636000, C356S237500, C250S559220

Reexamination Certificate

active

06900892

ABSTRACT:
A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities RS, RPand ellipsometric parameters may be used in measuring the diffracting structures and the associated films. Some of the radiation parameters may be more sensitive to a change in the parameter value of the profile or of the films then other radiation parameters. One or more radiation parameters that are more sensitive to such changes may be selected in the above-described optimization process to arrive at a more accurate measurement. The above-described techniques may be supplied to a track/stepper and etcher to control the lithographic and etching processes in order to compensate for any errors in the profile parameters.

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International Search Report for corresponding PCT application No. PCT/US01/49001 dated Apr. 18, 2002.
Patent Search conducted on Aug. 1, 2000.
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“Algorithm Implementation and Techniques for Providing More Reliable Overlay Measurements and Better Tracking of the Shallow Trench Isolation (STI) Process,” D. Schramm et al.,SPIE: Conference on Metrology, Inspection, and Process Control of Microlithography XIII,.Mar. 1999, pp. 116-122.

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