Parallel sweeping system for electrostatic sweeping ion implante

Details Parallel sweeping system for electrostatic sweeping ion implante Parallel sweeping system for electrostatic sweeping ion implante

1988-09-12

1990-07-17

Blum, Theodore M.

Electric lamp and discharge devices: systems

Cathode ray tube circuits

Cathode-ray deflections circuits

315 14, 313432, H01J 2974

Patent

active

049423428

ABSTRACT:
A parallel sweeping system for electrostatic sweeping ion implanters comprising an ion source for generating an ion beam, first and second multipole beam deflectors along and around a common optical axis and a target wafer to be raster-scanned by the deflected beam. The two deflectors have the same number of electrodes of five or more and have similar configurations. One electrode of the first deflector is paired with an electrode of the second deflector in the same plane common with the optical axis, but on the opposite side of the optical axis. The same sweeping voltage is applied simultaneously to each electrode of a pair in the same plane and predetermined different voltages to each pair of electrodes. Thus, a substrate is constantly raster-scanned by means of parallel ion beams with predetermined direction, namely raster-scanned with the ion beam all over a large wafer with exact parallelism to the optical axis.

REFERENCES:
patent: 3753034 (1973-08-01), Spicer
patent: 4315153 (1982-02-01), Vahrenkamp

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