Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Patent
1993-11-17
1995-04-04
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
257723, 257686, 257700, H01L 3902
Patent
active
054040442
ABSTRACT:
A multilayer, high yield and high density integrated circuit (IC) chips interposer and the method of manufacture therefore. A thin polyimide film is circuitized with copper on both sides. One side may be reserved for power or ground with the opposite side being a signal plane. Adhesive is laminated over both sides covering the circuit patterns. Vias are drilled through at least one adhesive surface, and through the polyimide film. Metal (copper) is blanket sputtered to coat the via walls. Polymer Metal Conductive (PMC) paste is screened to at least partially fill the vias. The Blanket metal is sub-etched using the screened PMC as a mask. Layers are stacked to form the interposer with the PMC bonding the stacked layers together and electrically interconnecting between layers.
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Booth Richard B.
Gephard Robert H.
Gremban Bradley S.
Poetzinger Janet E.
Shen David T.
Clark S. V.
International Business Machines - Corporation
James Andrew J.
Peterson Jr. Charles W.
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