Parallel plate plasma CVD apparatus

Details Parallel plate plasma CVD apparatus Parallel plate plasma CVD apparatus

1998-08-26

2000-04-18

Dang, Thi

Coating apparatus

Gas or vapor deposition

With treating means

H05H 100, C23C 1600

Patent

active

060502177

ABSTRACT:
A parallel plate plasma CVD apparatus comprises a radio-frequency generator; a reaction chamber; a bottom electrode provided in the reaction chamber and grounded; a top electrode provided opposite to the bottom electrode in the reaction chamber and connected to the radio-frequency generator; a mesh electrode provided between the bottom electrode and the top electrode in the reaction chamber; and one of a resistor and a capacitor electrically connected between the bottom electrode and the mesh electrode.

REFERENCES:
patent: 5242532 (1993-09-01), Cain
patent: 5248371 (1993-09-01), Maher et al.
J.W. Coburn, et al., "Positive-ion bombardment of substrates in rf diode glow discharge sputtering", J. Appll Phys., vol. 43, No. 12, Dec. 1972.
A. Matsuda, et al., "Plasma Spectroscopy--glow discharge deposition of hydrogenated amorphous silicon", Thin Solid Films, 92, 171-187 (1982).

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