Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2002-02-28
2004-07-27
Lee, Eddie (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S109000
Reexamination Certificate
active
06768177
ABSTRACT:
FIELD OF INVENTION
The present invention relates to a semiconductor device, particularly to a parallel plate diode.
DESCRIPTION OF BACKGROUND ART
The conventional semiconductor diodes has an p-n junction structure made of semiconductor materials in which the carriers make orientated movements when extra electric field force is applied and they exhibit unidirectional conductivity. Such semiconductor diodes are mainly used as rectifying or switching device. Evidently, when no bias voltage or bias current is applied, the unidirectional conductivity of such diodes will disappear and become ordinary linear devices. There is another semiconductor device called selenium pile, made of several plate-like semiconductor materials, e.g., selenium rectifying plates, in series connection. It is a rectifying device that exhibits unidirectional conductivity only when extra electric field exists.
SUMMARY OF THE INVENTION
An object of the present invention is to provide a parallel plate diode that can maintain unidirectional conductivity in the circuit with no application of bias voltage or bias current.
In order to accomplish the object mentioned above, a parallel plate diode comprising metal electrodes and semiconductor materials contacting metal electrodes, wherein the two thin plate electrodes made of metal are disposed in parallel, and a layer of thin plate semiconductor material sandwiched between the two thin plate electrodes. The concentration of the carriers in the semiconductor material layer is 20% or less than that of the electrons in the metal. One of the metal electrodes is made so as to have a plurality of recesses from its surface into the interior on the side that faces the semiconductor coat layer. The diameter of those recesses is less than 4 micrometers.
Preferably, said recesses are well-shape cavities.
The parallel plate diode according to the present invention can be used as the detecting diode, which can improve the performance of the radiodetector. Furthermore, it can also be used as an electronic watch, a micro calculator as well as the power of other small power electric appliances.
REFERENCES:
patent: 3987305 (1976-10-01), Gilbert
patent: 4947104 (1990-08-01), Pyke
patent: 4990988 (1991-02-01), Lin
patent: 5365102 (1994-11-01), Mehrotra et al.
patent: 6501145 (2002-12-01), Kaminski et al.
patent: 0506450 (1992-09-01), None
Jiang Ling
Xu Qiang
Xu Yelin
Institute of Biophysics, Chinese Academy of Sciences
Isenberg Joshua D.
JDI Patent
Lee Eddie
Owens Douglas W.
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