Parallel and series-coupled transistors having gate conductors f

Details Parallel and series-coupled transistors having gate conductors f Parallel and series-coupled transistors having gate conductors f

1997-06-20

1999-02-02

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257369, 257374, 257396, 257397, 257408, 257904, H01L 2711

Patent

active

058669345

ABSTRACT:
An improved series and/or parallel connection of transistors within a logic gate is presented. The improved connection is brought about by a sacrificial structure on which gate conductors are formed adjacent sidewall surfaces of the sacrificial structure. The sacrificial structure thereby provides spacing between the series-connected or parallel-connected transistors. Upon removal of each sacrificial structure, a pair of transistors can be formed by implanting dopant species into the substrate on opposite sides of the spaced conductors. Beneath what was once a sacrificial structure is a shared implant area to which two transistors are coupled either in series or in parallel. By depositing the gate conductor material and then anisotropically removing the material except adjacent the vertical sidewall surfaces, an ultra short gate conductor can be formed concurrent with other gate conductors within a logic gate.

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No Author, "Process for Making Very Small, Asymmetric, Field-Effect Transistors", I.B.M. Technical Disclosure Bulletin, vol. 30, No. 3, Aug., 1987, pp. 1136-1137.
No Author, "Low Series Resistance Source by Spacer Methods," vol. 33, No. 1A, Jun. 1990, pp. 75-77.

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