Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2011-07-19
2011-07-19
Le, Thong Q (Department: 2827)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S189040, C365S189150, C365S189160, C365S196000, C365S207000
Reexamination Certificate
active
07983104
ABSTRACT:
An array of non-volatile memory cells arranged in logical columns and logical rows, and associated circuitry to enable reading or writing one or more memory cells on a row in parallel. In some embodiments, the array of memory cells may include a phase change material. In some embodiments, the circuitry may include a write driver, a read driver, a sense amplifier, and circuitry to isolate the memory cells from the sense amplifier with extended refresh.
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Fuji Yukio
Parkinson Ward
Bray Kevin L.
Le Thong Q
Ovonyx Inc.
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