Page buffer architecture for programming, erasing and...

Static information storage and retrieval – Systems using particular element – Amorphous

Reexamination Certificate

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C365S148000, C365S189050, C365S225700

Reexamination Certificate

active

11139227

ABSTRACT:
In the present method of programming and erasing the resistive memory devices of a memory device array, upon a single command, high current is provided in both the program and erase functions to program and erase only those memory devices whose state is to be changed from the previous state.

REFERENCES:
patent: 5768193 (1998-06-01), Lee et al.
patent: 5982675 (1999-11-01), Fujimoto
patent: 6643213 (2003-11-01), Perner et al.
patent: 6785154 (2004-08-01), Sunaga et al.
patent: 2002/0159286 (2002-10-01), Sunaga et al.
patent: 2003/0174574 (2003-09-01), Perner et al.
patent: 2006/0268595 (2006-11-01), Bill et al.
patent: WO 2004/064074 (2004-07-01), None

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