Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure
Reexamination Certificate
2005-09-27
2005-09-27
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Test or calibration structure
C257S919000, C257S911000, C438S004000, C438S010000, C438S012000, C324S758010, C324S754120, C250S310000, C250S311000
Reexamination Certificate
active
06949765
ABSTRACT:
A new test structure to locate bridging defects in a conductive layer of an integrated circuit device is achieved. The test structure comprises a line comprising a conductive layer overlying a substrate. The line is coupled to ground. A plurality of rectangles comprises the conductive layer. The rectangles are not connected to the line or to other rectangles. Near edges of the rectangles and of the line are parallel. The rectangles are floating. The test structure is used with a passive voltage contrast test in a scanning electron microscope. A test structure and method to measure critical dimensions is disclosed.
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Oh Chong Khiam
Redkar Shailesh
Song Zhigang
Chartered Semiconductor Manufacturing Ltd.
Flynn Nathan J.
Forde Remmon R.
Pike Rosemary L.S.
Saile George D.
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