Pad structures to improve board-level reliability of...

Active solid-state devices (e.g. – transistors – solid-state diode – Lead frame – With stress relief

Reexamination Certificate

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Details

C257S674000, C257S784000, C438S119000, C438S646000, C438S612000

Reexamination Certificate

active

07446399

ABSTRACT:
The present invention is directed to a new bonding pad structure having a rugged contact interface that makes it more difficult for a crack to grow from the peripheral edge of the bonding pad. The rugged contact interface also helps to accumulate more solder paste on the edge of the bonding pad, increase the thickness of the solder layer near the pad edge and prevent the pad edge from being oxidized and turning into a crack initiation point.

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