Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1993-06-24
1995-07-11
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257356, 257362, 257363, 257546, 257603, H01L 2906, H01L 2978
Patent
active
054323681
ABSTRACT:
A diode structure for protecting a pad in an integrated circuit formed in a P-type substrate coupled between a first supply terminal connected to the substrate and a second supply terminal. The structure includes a P-type pocket whose edges and bottom contact an N-type region, an N-type area formed in the pocket, an N-type ring laterally surrounding the region of the second conductivity type and contacting the substrate, and a P-type well surrounding the ring. The ring and the pocket are connected to the pad, the N-type area formed in the pocket is connected to the second supply terminal and the well is connected to the first supply terminal.
REFERENCES:
International Electron Devices Meeting, Dec. 1991, San Francisco, Calif., US, pp. 799-802, XP279627, M. P. Masaquelier et al., "Method of Internal Overvoltage Protection and Current Limit for a Lateral PNP Transistor Formed by Polysilicon Self-Aligned Emitter and Base, with Extended Collector".
Patent Abstracts of Japan, vol. 13, No. 220 (E-762) (2568) May 23, 1989, & JP-A-10 32 66 (Mitsubishi) Feb. 2, 1989.
Carroll J.
SGS-Thomson Microelectronics S.A.
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