Fishing – trapping – and vermin destroying
Patent
1995-05-04
1997-07-01
Chaudhari, Chandra
Fishing, trapping, and vermin destroying
437979, 148DIG117, H01L 218247
Patent
active
056438133
ABSTRACT:
Improved packing density as well as improved performance and manufacturing yield is achieved in an electrically programmable memory by confining floating gate structures between isolation structures covered with a thin nitride layer. The confinement of the floating gate is achieved by planarization, preferably with a self-limiting chemical/mechanical polishing process, to the surface of the nitride layer covering the isolation structures. Gate oxide and control electrode connections can then be formed on a substantially planar surface without compromising the quality of the gate oxide or breakdown voltage the device must withstand for programming. Since severe topology is avoided over which these connections are formed, improved formation of low resistance connections, possibly including metal connections, are possible and allow scaling of transistors of the memory cells to be scaled to sizes not previously possible.
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patent: 5324972 (1994-06-01), Takebuchi et al.
patent: 5402372 (1995-03-01), Bergemont
"A New Self-Aligned Planar Array Cell for Ultra High Density EPROMS"; A. T. Mitchell et al.; Texas Instruments Incorporation; IEEE 1987; pp. 548-551.
Acocella Joyce Elizabeth
Galli Carol
Hsu Louis Lu-Chen
Ogura Seiki
Rovedo Nivo
Chaudhari Chandra
International Business Machines - Corporation
Petraske Eric W.
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