Active solid-state devices (e.g. – transistors – solid-state diode – Encapsulated – With specified encapsulant
Reexamination Certificate
2011-06-14
2011-06-14
Wilczewski, Mary (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Encapsulated
With specified encapsulant
C257S789000, C257SE23116, C257SE23123, C257SE23134, C257SE21502
Reexamination Certificate
active
07960847
ABSTRACT:
A manufacturing method for a packaging structure of SIP (system in package) includes the following steps. First step is providing a substrate having electronic devices thereon. Second step is covering the electronic devices by a mixture of a molding compound and a conductive polymer precursor so as to form a molding structure, wherein the substrate, the electronic devices and the molding structure forms a collective electronic module. Third step is separating the collective electronic module into a plurality of individual electronic modules. Fourth step is performing a doping step by using a doping element for transforming the conductive polymer precursor in the mixture into a conductive layer near the surface of the molding structure. Therefore, the manufacturing method is optimized for forming a shielding structure of the SIP module.
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Huang Chung-Er
Kuo Ming-Tai
Azurewave Technologies, Inc.
Rosenberg , Klein & Lee
Wilczewski Mary
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