Packaging structure for a hermetically sealed flip chip semicond

Details Packaging structure for a hermetically sealed flip chip semicond Packaging structure for a hermetically sealed flip chip semicond

1994-04-14

1998-01-06

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Flip chip

257779, 257780, H01L 2348, H01L 2352, H01L 2940

Patent

active

057058580

ABSTRACT:
A packaging structure for a semiconductor device has plural hermetically sealed units each containing a flip-chip electrically interconnected to an intermediate substrate, circuit patterns of the flip-chips being within the sealed environment. Each hermetically sealed unit is connected to a base wiring substrate through soldered electrodes. Replacement of a flip-chip is accomplished by melting the solder joints between the flip-chip's respective hermetically sealed unit and the base wiring substrate. The flux vapor given off during this replacement process does not damage the circuit patterns of nearby flip-chips because they are contained in a sealed environment. Additionally, the electrodes between the flip-chips and intermediate substrate and between intermediate substrates and the base wiring layer contain projections which prevent crushing of solder between opposing electrodes and deformation of the flip-chip under a heavy load.

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