Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Assembly of plural semiconductive substrates each possessing...
Reexamination Certificate
2007-07-03
2007-07-03
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Assembly of plural semiconductive substrates each possessing...
C438S017000, C438S123000, C438S124000, C438S127000, C257SE23117
Reexamination Certificate
active
11098343
ABSTRACT:
An IC device is packaged for accelerated transient particle emission by doping the underfill thereof with a transient-particle-emitting material having a predetermined, substantially constant emission rate. The emission rate may be tunable. In one aspect, a radioactive adhesive composition is provided for bonding a semiconductor device to a chip carrier. The radioactive adhesive composition is made from a cured reaction product including a resin and a filler, and may be reworkable or non-reworkable. Either the resin or the filler, individually or both together as a mix, are doped substantially uniformly with the transient-particle-emitting material, thereby putting the transient-particle-emitting in close proximity with the IC to be tested. The underfill is formulated to have a stable chemistry, and the doped particles are encapsulated, so as to contain the emissions. Accelerated transient-particle-emission testing may then be performed on the IC in situ to provide accelerated detection of soft errors.
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Ackaret Jerry D.
Gaynes Michael A.
Gordon Michael S.
Jones, legal representative Janes
LaBianca Nancy C.
Breedlove, Esq. Jill M.
Heslin Rothenberg Farley & & Mesiti P.C.
Shkruko, Esq. Eugene I.
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