Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-01-11
2011-01-11
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S107000, C438S115000, C438S122000, C438S455000, C438S745000
Reexamination Certificate
active
07867892
ABSTRACT:
The present invention relates a packaging carrier with high heat dissipation for packaging a chip, comprising: a carrier body, an interfacial metal layer, at least one diamond-like carbon thin film, a plated layer, and an electrode layer. Herein, the packaging carrier further comprises through holes. The present invention further discloses a method for manufacturing the aforementioned packaging carrier, comprising: providing a carrier body; forming an interfacial metal layer on the upper surface of the carrier body; forming a diamond-like carbon thin film on the interfacial metal layer; forming a plated layer on the diamond-like carbon thin film; forming an electrode layer on the lower surface of the carrier body; and forming through holes extending through all or part of the aforementioned elements. The present invention uses a diamond-like carbon thin film and through holes for heat dissipation in three dimensions to improve heat dissipation of an electronic device.
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Hu Shao-Chung
Huang Shih-Yao
Kan Ming-Chi
Bacon & Thomas PLLC
Green Telly D
Kinik Company
Wilczewski Mary
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