Active solid-state devices (e.g. – transistors – solid-state diode – Lead frame – With heat sink means
Reexamination Certificate
2006-06-27
2006-06-27
Chambliss, Alonzo (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Lead frame
With heat sink means
C257S707000, C257S713000, C257S720000, C257S787000, C257S796000, C438S122000, C438S123000, C438S127000, C361S704000, C361S709000, C361S710000, C361S722000
Reexamination Certificate
active
07067905
ABSTRACT:
The present invention is directed toward methods and apparatuses for encapsulating a microelectronic die or another type of microelectronic device. One aspect of the present invention is directed toward packaging a microelectronic die that is attached to either a first surface or a second surface of a substrate. The die can be encapsulated by positioning the die in a cavity of a substrate and sealing the substrate to the substrate. The method can further include injecting an encapsulation compound into the cavity at a first end of the substrate to move along the first surface of the substrate. This portion of the compound defines a first flow of compound along the first surface that moves in a first direction from a first end of the substrate toward a second end of the substrate. Several embodiments of the method also include driving a portion of the compound through the substrate at a pass-through location or a secondary gate that is spaced apart from the first end of the substrate to generate a second flow of compound along the second surface of the substrate. The second flow of compound moves in a second direction toward the first end of the substrate. As the first and second flows of compound move through the mold, the method includes inhibiting a third flow of compound from moving in the first direction along the second surface of the substrate between the first end of the substrate and the pass-through location.
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Chambliss Alonzo
Micro)n Technology, Inc.
Perkins Coie LLP
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