Patent
1989-12-07
1991-04-16
James, Andrew J.
357 72, 357 73, 357 76, H01L 2302
Patent
active
050087355
ABSTRACT:
The invention is a packaged diode suitable for operation at temperatures above 200.degree. C. and during temperature excursions between -65.degree. C. and at least 350.degree. C. The invention comprises a diode having respective p-n portions with a p-n junction therebetween, and formed of a semiconductor material that is stable and will exhibit satisfactory diode characteristics at such temperatures. Ohmic contacts are made to the opposite sides of the junction diode and to the respective p and n portions of the diode. An electrode adjacent each of the ohmic contacts is formed of an electrically conductive material that has a coefficient of thermal expansion similar to the coefficient of thermal expansion of the semiconductor material for providing structural support to the junction diode and electrical contact therewith. A lead contacts each of the electrodes opposite each electrode's contact with the diode. Each lead is formed of an electrically conductive material and is joined to the respective electrode by an alloy that likewise remains physically and electrically stable at temperatures greater than 200.degree. C. and during repetitive operating cycles over temperature excursions between about -65.degree. C. and 350.degree. C. A packaging material surrounds the junction diode and portions of the electrode to hermetically seal it.
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Edmond John A.
Hamerski Roman
Mitchell Muni M.
Sedigh Mohammad
Waltz Douglas G.
Cree Research Inc.
General Instrument Corporation
James Andrew J.
Ratliff Reginald A.
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