Package structure for high-power surface-mounted electronic devi

Details Package structure for high-power surface-mounted electronic devi Package structure for high-power surface-mounted electronic devi

1997-11-17

1999-08-24

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With provision for cooling the housing or its contents

257720, 257703, 257704, 257708, H01L 2334

Patent

active

059427965

ABSTRACT:
An electronic device structure includes a ceramic base and a ceramic lid. The base has a ceramic body with sides and a bottom defining an interior cavity of the ceramic body. There is a first body aperture through the bottom of the ceramic body, a first metallic base pad affixed to an exterior of the bottom of the ceramic body and overlying the first body aperture, a second aperture through the bottom of the ceramic body, and a second metallic base pad affixed to an exterior of the bottom of the ceramic and overlying the second aperture. The second base pad has a second base pad aperture therethrough aligned with the second aperture. A bonding button is positioned within the interior cavity and overlying the second aperture. The bonding button is formed of a bonding pad in the interior of the ceramic and an integral connector extending through the second aperture and the second base pad aperture and affixed to the second base pad. A high-power electronic device such as a power MOSFET is affixed to an interior surface of the first metallic base pad, and a wire interconnector extends from the electronic device to the bonding pad of the bonding button.

REFERENCES:
patent: 4172261 (1979-10-01), Tsuzuki et al.
patent: 5111277 (1992-05-01), Medeiros, III et al.
patent: 5477081 (1995-12-01), Nagayoshi
patent: 5481136 (1996-01-01), Kohmoto et al.
patent: 5644163 (1997-07-01), Tsuji

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